한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Organic thin film transistors with an organic/high-k inorganic bilayer gate dielectric layer

  • Seol, Y.G. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Lee, N.E. (School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University) ;
  • Lee, S.S. (School of Materials Science and Engineering, Hanyang University) ;
  • Ahn, J.H. (School of Materials Science and Engineering, Hanyang University)
  • Published : 2006.08.22
Download PDF
⟨ Previous Next ⟩

Abstract

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

Keywords