한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.1279-1282
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- 2006
An Ultra Low-Power and High-Speed Down-Conversion Level Shifter Using Low Temperature Poly-Si TFTs for Mobile Applications
- Ahn, Soon-Sung (Division of Electrical and Computer Engineering, Hanyang University) ;
- Choi, Jung-Hwan (Division of Electrical and Computer Engineering, Hanyang University) ;
- Choi, Byong-Deok (Division of Electrical and Computer Engineering, Hanyang University) ;
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Kwon, Oh-Kyong
(Division of Electrical and Computer Engineering, Hanyang University)
- Published : 2006.08.22
Abstract
An ultra low-power down-conversion level shifter using low temperature poly-crystalline silicon thin film transistors is proposed for mobile applications. The simulation result shows that the power consumption of the proposed circuits is only 17% and the propagation delay is 48% of those of the conventional cross-coupled level shifter without additional area. And the measured power consumption is only 21% of that of the crosscoupled level shifter.
Keywords