한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Characterization of the ultra thin films of silicon oxynitride deposited by plasma-assisted $N_2O$ oxidation for thin film transistors

  • Hwang, Sung-Hyun (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Jung, Sung-Wook (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Kim, Hyun-Min (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Kim, Jun-Sik (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Jang, Kyung-Soo (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Lee, Jeoung-In (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Lee, Kwang-Soo (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Jung, Won-June (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Dhungel, S.K. (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Ghosh, S.N. (School of Information and Communication Engneering, Sungkyunkwan University) ;
  • Yi, J. (School of Information and Communication Engneering, Sungkyunkwan University)
  • Published : 2006.08.22
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Abstract

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) is investigated using X-ray energy dispersive spectroscopy (EDS). We have reported about Ellipsometric measurement, Capacitance - Voltage characterization and processing conditions.

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