A five mask CMOS LTPS process with LDD and only one ion implantation step

  • Published : 2006.08.22

Abstract

We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

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