한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.22-23
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- 2006
오존/증기 혼합물을 이용한 고효율 반도체 감광막 제거기술
High Efficiency Photoresist Strip Technology by using the Ozone/Napor Mixture
- Son, Young-Su (Korea Research Institute of Machinary & Materials (KIMM)) ;
- Ham, Sang-Yong (Korea Research Institute of Machinary & Materials (KIMM))
- 발행 : 2010.04.01
초록
A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/