Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.66-66
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- 2006
Silicon Containing Bottom Anti-Reflective Coating for ArF Photolithography
ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅
- Lee, Jun-Ho (Kumho Petrochemical Electronic Materials Division) ;
- Kim, Hyung-Gi (Kumho Petrochemical Electronic Materials Division) ;
- Kim, Myung-Woong (Kumho Petrochemical Electronic Materials Division) ;
- Lim, Young-Toek (Kumho Petrochemical Electronic Materials Division) ;
- Park, Joo-Hyun (Kumho Petrochemical Electronic Materials Division)
- 이준호 (금호석유화학 전자재료연구소) ;
- 김형기 (금호석유화학 전자재료연구소) ;
- 김명웅 (금호석유화학 전자재료연구소) ;
- 임영택 (금호석유화학 전자재료연구소) ;
- 박주현 (금호석유화학 전자재료연구소)
- Published : 2010.04.01
Abstract
Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).
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