Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.69-70
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- 2006
Electrical characteristic of Phase-change Random Access Memory with improved bottom electrode structure
하부전극 구조 개선에 의한 상변화 메모리의 전기적 특성
- Kim, Hyun-Koo (Dept. of Electronic Materials Eng.) ;
- Choi, Hyuk (Dept. of Electronic Materials Eng.) ;
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Cho, Won-Ju
(Dept. of Electronic Materials Eng.)
;
-
Chung, Hong-Bay
(Dept. of Electronic Materials Eng.)
- 김현구 (광운대학교 전자정보공과대학 전자재료공학과) ;
- 최혁 (광운대학교 전자정보공과대학 전자재료공학과) ;
-
조원주
(광운대학교 전자정보공과대학 전자재료공학과)
;
-
정홍배
(광운대학교 전자정보공과대학 전자재료공학과)
- Published : 2010.04.01
Abstract
A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.
Keywords