Characterization of channel length and width of p channel poly-Si thin film transistors

P channel poly-Si TFT의 길이와 두께에 관한 특성

  • Lee, Jeoung-In (School of Information and Communication Enginnering, Sungkyunkwon University) ;
  • Hwang, Sung-Hyun (School of Information and Communication Enginnering, Sungkyunkwon University) ;
  • Jung, Sung-Wook (School of Information and Communication Enginnering, Sungkyunkwon University) ;
  • Jang, Kyung-Soo (School of Information and Communication Enginnering, Sungkyunkwon University) ;
  • Lee, Kwang-Soo (School of Information and Communication Enginnering, Sungkyunkwon University) ;
  • Chung, Ho-Kyoon (SAMSUNG SDI CO., LTD) ;
  • Choi, Byoung-Deog (SAMSUNG SDI CO., LTD) ;
  • Lee, Ki-Yong (SAMSUNG SDI CO., LTD) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwon University)
  • 이정인 (성균관대학교 정보통신소자연구실) ;
  • 황성현 (성균관대학교 정보통신소자연구실) ;
  • 정성욱 (성균관대학교 정보통신소자연구실) ;
  • 장경수 (성균관대학교 정보통신소자연구실) ;
  • 이광수 (성균관대학교 정보통신소자연구실) ;
  • 정호균 (삼성 SDI) ;
  • 최병덕 (삼성 SDI) ;
  • 이기용 (삼성 SDI) ;
  • 이준신 (성균관대학교 정보통신소자연구실)
  • Published : 2010.04.01

Abstract

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

Keywords