Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Ferroelectric properties of BLT films deposited on $ZrO_2$Si substrates

  • Park, Jun-Seo (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Lee, Gwang-Geun (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Park, Kwang-Hun (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Jeon, Ho-Seung (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Im, Jong-Hyun (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Park, Byung-Eun (Department of Electrical and Computer Engineering, University of Seoul) ;
  • Kim, Chul-Ju (Department of Electrical and Computer Engineering, University of Seoul)
  • Published : 2006.11.09
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Abstract

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

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