Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Electrical and optical properties of ZnO:Ga, Al thin films prepared by sol-gel method

Sol-gel법에 의한 ZnO:Ga, Al 박막의 투명 전도막 제작과 전기 광학적 특성

  • Nam, Gil-Mo (Department of Materials Science and Engineering, University of Seoul) ;
  • Kwon, Myoung-Seok (Department of Materials Science and Engineering, University of Seoul)
  • 남길모 (서울시립대학교, 신소재공학과) ;
  • 권명석 (서울시립대학교, 신소재공학과)
  • Published : 2006.11.09
Download PDF
⟨ Previous Next ⟩

Abstract

Ga-doped and Al-doped ZnO thin films were fabricated via a sol-gel technique and electrical and optical properties of the films were investigated. Film deposition was performed by spin coating at 4000 rpm for 30 s on $SiO_2$ glass substrate FE-SEM was used to obtain the surface morphology images and the film thickness Four-point probe and UV-VIS spectrophotometer were used to measure the sheet resistance and the optical transparency, respectively.

Keywords