The effect of chemical kinetics of slurry components on Cu CMP

화학반응속도가 Cu CMP에 미치는 영향

  • Jung, Won-Duck (Department of Precision & Mechanical Engineering in PNU) ;
  • Chang, One-Moon (Department of Precision & Mechanical Engineering in PNU) ;
  • Park, Sung-Min (Department of Precision & Mechanical Engineering in PNU) ;
  • Jeong, Hae-Do (Department of Precision & Mechanical Engineering in PNU)
  • 정원덕 (부산대학교 정밀기계공학과) ;
  • 장원문 (부산대학교 정밀기계공학과) ;
  • 박성민 (부산대학교 정밀기계공학과) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2006.11.09

Abstract

Chemical kinetics affects Cu CMP results (removal rate, Non uniformity etc.) Because Cu is removed by chemical action. Key factors in chemical kinetics are process temperature and concentration of slurry components. In this study, Hydrogen peroxide and citric acid were selected as a oxidant and a complexing agent and Slurry were made by mixing this components. In order to study effects of Chemical Kinetics, X-ray photoelectron spectroscopy (XPS) were performed on Cu sample after etching test as concentration of citric acid and slurry temperature. Finally Cu CMP was performed as same conditions.

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