Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.26-27
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- 2006
Fabrication of Tern bit level SONOS F1ash memories
테라비트급 SONOS 플래시 메모리 제작
- Kim, Joo-Yeon (Ulsan College) ;
- Kim, Byun-Cheul (Jinju national University) ;
- Seo, Kwang-Yell (Kwangwoon University) ;
- Kim, Jung-Woo (Samsung Electronics)
- Published : 2006.06.22
Abstract
To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.
Keywords
- F1ash memory;
- SONOS;
- 30nm Memory array;
- CSL(Commson Source Line)-NOR;
- SSL(Separated source line)-NOR;
- NAND