Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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DC Characteristic of Silicon-on-Insulator n-MOSFET with SiGe/Si Heterostructure Channel

SiGe/Si 이종접합구조의 채널을 이용한 SOI n-MOSFET의 DC 특성

  • Choi, A-Ram (Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Choi, Sang-Sik (Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Yang, Hyun-Duk (Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University) ;
  • Kim, Sang-Hoon (Electronics and Telecommunications Research Institute) ;
  • Lee, Sang-Heung (Electronics and Telecommunications Research Institute) ;
  • Shim, Kyu-Hwan (Semiconductor Physics Research Center, Department of Semiconductor Science and Technology, Chonbuk National University)
  • 최아람 (전북대학교, 반도체물성연구소, 반도체과학기술학과) ;
  • 최상식 (전북대학교, 반도체물성연구소, 반도체과학기술학과) ;
  • 양현덕 (전북대학교, 반도체물성연구소, 반도체과학기술학과) ;
  • 김상훈 (한국전자통신연구원) ;
  • 이상흥 (한국전자통신연구원) ;
  • 심규환 (전북대학교, 반도체물성연구소, 반도체과학기술학과)
  • Published : 2006.06.22
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Abstract

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

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