Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Microstructures and Electrical Properties of ZnO/Sapphire Thin Films Doped by P and As based on Ampouele-tube Method

Ampoule-tube 법으로 P와 As을 도핑한 ZnO/Sapphire 박막의 미세구조와 전기적 특성

  • Yoo, In-Sung (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Jin, Eun-Mi (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • So, Byung-Moon (Iksan National Coll.) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 유인성 (원광대학교 전기전자 및 정보공학부) ;
  • 진은미 (원광대학교 전기전자 및 정보공학부) ;
  • 소병문 (익산국립대학) ;
  • 박훈배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2006.06.22
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Abstract

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. Al sputtering process of ZnO thin films substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5N. The ZnO thin films were in-situ annealed at $600^{\circ}C$, $800^{\circ}C$ in $O_2$ atmosphere. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5{\times}10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAS_2$. Those diffusion was perform at $650^{\circ}C$ during 3hr. We confirmed that p-type properties of ZnO thin films were concerned with dopant sources rather than diffusion temperature.

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