SPICE Modeling of Organic Field Effect Transistors (OFETs)

유기 박막 트랜지스터의 스파이스 모형화

  • Lee, Jae-Woo (School of Electrical Engineering, Korea University) ;
  • Park, Eung-Seok (School of Electrical Engineering, Korea University) ;
  • Park, So-Jeong (School of Electrical Engineering, Korea University) ;
  • Jang, Do-Young (School of Electrical Engineering, Korea University) ;
  • Kim, Kang-Hyun (School of Electrical Engineering, Korea University) ;
  • Kim, Gyu-Tae (School of Electrical Engineering, Korea University)
  • 이재우 (고려대학교 나노소자연구실) ;
  • 박응석 (고려대학교 나노소자연구실) ;
  • 박소정 (고려대학교 나노소자연구실) ;
  • 장도영 (고려대학교 나노소자연구실) ;
  • 김강현 (고려대학교 나노소자연구실) ;
  • 김규태 (고려대학교 나노소자연구실)
  • Published : 2006.06.22

Abstract

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in the amorphous TFTs(a-Si:H TFTs). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs which might originate from the influence of the hopping conduction.

Keywords