Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Evaluation of the fabrications and properties of ultra-thin film for memory device application

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  • Jeong, Sang-Hyun (Dept. of Electronics Engineering, Cheongju Univ) ;
  • Choi, Haeng-Chul (Dept. of Electronics Engineering, Cheongju Univ) ;
  • Kim, Jae-Hyun (Dept. of Electronics Engineering, Cheongju Univ) ;
  • Park, Sang-Jin (Division of Electronics & Information Engineering, Cheongju Univ) ;
  • Kim, Kwang-Ho (Division of Electronics & Information Engineering, Cheongju Univ)
  • 정상현 (청주대학교 전자공학과) ;
  • 최행철 (청주대학교 전자공학과) ;
  • 김재현 (청주대학교 전자공학과) ;
  • 박상진 (청주대학교 전자정보공학부) ;
  • 김광호 (청주대학교 전자정보공학부)
  • Published : 2006.06.22
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Abstract

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

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