Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.173-174
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- 2006
Analysis of Transient Characteristics for IGBTs with Gate resistances
게이트저항에 따른 IGBT의 과도 특성 해석
- Ryu, Se-Hwan (Konkuk Univ. Electrical department) ;
- Lee, Myung-Soo (Agency for Technology and Standard) ;
- Won, Chang-Sub (Konkuk Univ. Electrical department) ;
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An, Hyung-Keun
(Konkuk Univ. Electrical department)
;
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Han, Deuk-Young
(Konkuk Univ. Electrical department)
- Published : 2006.06.22
Abstract
In this paper we proposed transient model for NPT(Non Punch-Through) IGBT(Insulated Gate Bipolar Transistor) with gate resistances. As gate resistance increases, turn-off time increases. But If gate resistance is small, overshoot voltage increase. To analyze the effect of gate resistance, the transient model is made and the experiments are conducted. We used gate resistances of values; 8[