Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Sputtering and Post-Annealing Condition on The Orientation of SBN Thin Films

스퍼터링 및 후 열처리 조건변화에 따른 SBN 강유전체 박막의 배향성에 관한 연구

  • Lee, Chae-Jong (School of Science and Materials Engineering, Yeungnam University) ;
  • Lee, Hee-Young (School of Science and Materials Engineering, Yeungnam University)
  • 이채종 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Published : 2006.05.19
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Abstract

SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/$TiO_2$/$SiO_2$/Si or Pt(111)/Ti/$SiO_2$/Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{\AA}$ and the films were heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation and crystallization behavior were observed which showed the dependence on processing condition($O_2$/Ar ratio, substrate temp, annealing temp...).

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