Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.04a
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- Pages.62-63
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- 2006
Fabrication and characteristics of low temperature poly-Si thin film transistor using Polymer Substrates
저온에서 제작된 고분자 기판 위의 poly-si TFT 제조 및 특성
- Kang, Soo-Hee (Korea Electronics Technology Institute) ;
- Kim, Yong-Hoon (Korea Electronics Technology Institute) ;
- Han, Jin-Woo (Yonsei Univ.) ;
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Seo, Dae-Shik
(Yonsei Univ.)
;
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Han, Jeong-In
(Korea Electronics Technology Institute)
- Published : 2006.04.28
Abstract
In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on polymer substrates are investigated. The a-Si films was laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated nMOS TFT showed field-effect mobility of