Switching Characteristics of Magnetic Tunnel Junctions Comprising Amorphous NiFeSiB Free Layer

  • Chun B.S. (Dept. of Materials Science and Engineering, Korea University) ;
  • Kim Y.K. (Dept. of Materials Science and Engineering, Korea University) ;
  • Hwang J.Y. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim S.S. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim M.Y. (Dept. of Physics, Sookmyung Women's University) ;
  • Rhee J.R. (Dept. of Physics, Sookmyung Women's University) ;
  • Kim T.W. (Material and Devices Laboratory, Samsung Advanced Institute of Technology)
  • Published : 2006.06.01