Proceedings of the Korean Society Of Semiconductor Equipment Technology (한국반도체및디스플레이장비학회:학술대회논문집)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

가스압 변화에 따라 flexible 기판상에 제작한 Al이 첨가된 ZnO 박막의 특성

  • 김경환 (경원대학교 전기정보공학과) ;
  • 조범진 (경원대학교 전기정보공학과) ;
  • 금민종 (경원대학교 전기정보공학과)
  • Published : 2006.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we prepared Al doped ZnO thin films by using facing targets sputtering method. Al doped ZnO thin film was deposited with different working pressure on flexible substrate. We prepared Al doped ZnO thin film at room temperature, because the flexible substrate has weak thermal resistance. From the results, we could obtain thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$, an average transmittance of over 80% and a film thickness of 200nm.

Keywords