Proceedings of the Korean Institute of Surface Engineering Conference (한국표면공학회:학술대회논문집)
- 2006.10a
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- Pages.73-73
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- 2006
Effects of $N_2$ and NO addition of fast silicon layer chemical dry etching in $F_2/Ar$ remote plasma processing
빠른 실리콘 식각에 대한 $F_2/Ar$ 리모트 플라즈마와 $N_2$ 와 NO 첨가효과
- Published : 2006.10.19
Abstract
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