Analysis of n+ emitter properties using Dopant Pastes for Crystalline Silicon Solar Cells

결정질 실리콘 태양전지에 적용하기 위한 Dopant Pastes의 n+ emitter 특성 분석

  • 이지훈 (세종대학교 전략에너지개발사업단) ;
  • 조경연 (세종대학교 전략에너지개발사업단) ;
  • 최준영 (세종대학교 전략에너지개발사업단) ;
  • 이수홍 (세종대학교 전략에너지개발사업단)
  • Published : 2007.11.01

Abstract

The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

Keywords