Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of NVM Devices Using SPC Substrate

SPC 기판을 사용한 NVM 소자의 전기적 특성

  • Hwang, In-Chan (School of information and communication engineering, Sungkyunkwan University) ;
  • Lee, Jeoung-In (School of information and communication engineering, Sungkyunkwan University) ;
  • Yi, J. (School of information and communication engineering, Sungkyunkwan University)
  • 황인찬 (성균관대학교 정보통신공학부) ;
  • 이정인 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2007.11.01
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Abstract

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

Keywords