Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Carrier Mobility Enhancement in Strained-Si-on-Insulator (sSOI) n-/p-MOSFETs

Strained-SOI(sSOI) n-/p-MOSFET에서 캐리어 이동도 증가

  • Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Choi, Chel-Jong (Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute) ;
  • Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
  • 김관수 (광운대학교 전자재료공학과) ;
  • 정명호 (광운대학교 전자재료공학과) ;
  • 최철종 (한국전자통신연구원 IT 융합 부품 연구소) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Published : 2007.11.01
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Abstract

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

Keywords