Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.96-96
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- 2007
Low-Voltage, Room temperature Fabricated ZnO Thin Film Transistor using High-K $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ Gate Insulator
고유전 $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ 게이트 절연막을 이용한 저전압 구동 상온공정 ZnO 박막트랜지스터
- Cho, Nam-Gyu (Korea Advanced Institute of Science and Technology) ;
- Kim, Dong-Hun (Korea Advanced Institute of Science and Technology) ;
- Kim, Kyoung-Sun (Korea Advanced Institute of Science and Technology) ;
- Kim, Ho-Gi (Korea Advanced Institute of Science and Technology) ;
- Kim, Il-Doo (Korea Institute of Science and Technology)
- Published : 2007.11.01
Abstract
Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited