Electrical characteristics of 3-D stacked CMOS Inverters using laser crystallization method

레이저 결정화 방법을 적용한 3차원 적층 CMOS 인버터의 전기적 특성 개선

  • Published : 2007.11.01

Abstract

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

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