Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Fabrication of low temperature metal dot nano-floating gate memory using ELA Poly-Si thin film transistor

Poly-Si 기판을 이용한 저온 공정 metal dot nano-floating gate memory 제작

  • Koo, Hyun-Mo (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Shin, Jin-Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Dong-Uk (Department of Physics, Hanyang University) ;
  • Kim, Seon-Pil (Department of Physics, Hanyang University) ;
  • Kim, Eun-Kyu (Department of Physics, Hanyang University)
  • Published : 2007.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

Keywords