Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.142-142
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- 2007
Design of P-N Junction Type Thin-Film Thermoelectric Device and their Device Characteristics
P-N Junction Type 박막열전소자제작 및 특성
- Kwon, Sung-Do (Korea Institute of Science & Technology) ;
- Song, Hyun-Cheol (Korea Institute of Science & Technology) ;
- Jeong, Dae-Yong (Korea Institute of Science & Technology) ;
- Yoon, Seok-Jin (Korea Institute of Science & Technology) ;
- Ju, Byeong-Kwon (KOREA Univ.) ;
- Kim, Jin-Sang (Korea Institute of Science & Technology)
- 권성도 (한국과학기술연구원) ;
- 송현철 (한국과학기술연구원) ;
- 정대용 (한국과학기술연구원) ;
- 윤석진 (한국과학기술연구원) ;
- 주병권 (고려대학교) ;
- 김진상 (한국과학기술연구원)
- Published : 2007.11.01
Abstract
Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.