Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Dependences of die Power ratio on the properties in GZOB/Au multilayers

전력비 변화에 따른 Au Multilayer 위에 증착한 GZOB 박막의 특성

  • Lee, Jong-Hwan (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Lee, Kyu-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Kim, Bong-Suk (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Lee, Tae-Yong (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Kang, Hyun-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
  • Song, Joon-Tae (Department of Information and Communication Engineering, SungKyunKwan Univ.)
  • 이종환 (정보통신공학부, 성균관대학교) ;
  • 이규일 (정보통신공학부, 성균관대학교) ;
  • 김봉석 (정보통신공학부, 성균관대학교) ;
  • 이태용 (정보통신공학부, 성균관대학교) ;
  • 강현일 (정보통신공학부, 성균관대학교) ;
  • 송준태 (정보통신공학부, 성균관대학교)
  • Published : 2007.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

Effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films were investigated. GZOB thin films on Au based PC flexible substrate were deposited at various power in the range from 50 to 125 W by DC magnetron sputtering. Au layer was fabricated to achieve good electrical conductivity. The presence of additional boron impurity leads to improve structural defects. Thus, the c-axis orientation along (002) plane was enhanced with the increasing of power ratio and the surface morphology of the films showed a homogeneous and nano-sized microstructure. GZOB films grown at 125W were investigated a low resistivity value of $1{\times}10^{-3}{\Omega}cm$ and a visible transmission of 80% with a thickness of 300nm.

Keywords