Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Properties of GZO Thin Films Propared by RF Magnetron Sputtering at low temperature

RF 마그네트론 스퍼터링 법으로 저온 증착한 GZO박막의 특성

  • Kwon, Soon-Il (Department of Electronic Engineering, Chungju National University) ;
  • Kang, Gyo-Sung (Department of Electronic Engineering, Chungju National University) ;
  • Yang, Kea-Joon (Department of Electronic Engineering, Chungju National University) ;
  • Park, Jea-Hwan (Department of Electronic Engineering, Chungju National University) ;
  • Lim, Dong-Gun (Department of Electronic Engineering, Chungju National University) ;
  • Lim, Seung-Woo (Department of Electronic Engineering, Chungju National University)
  • 권순일 (충주대학교 전자공학과) ;
  • 강교성 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 박재환 (충주대학교 전자공학과) ;
  • 임동건 (충주대학교 전자공학과) ;
  • 임승우 (충주대학교 전자공학과)
  • Published : 2007.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper we report upon an investigation into the effect of sputter pressure and RF power on the electrical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. Argon gas pressure and RF power were in the range of 1~11 mTorr, and 50~100 W, respectively. However, the resistivity of the film was strongly influenced by the sputter pressure and RF power. We were able to achieve as low as $1.5{\times}10^{-3}\;{\Omega}cm$, without substrate temperature.

Keywords