Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistor Using an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si Structure

  • Jeon, Ho-Seung (School of Electrical and Computer Engineering University of Seoul) ;
  • Lee, Gwang-Geun (School of Electrical and Computer Engineering University of Seoul) ;
  • Kim, Joo-Nam (School of Electrical and Computer Engineering University of Seoul) ;
  • Park, Byung-Eun (School of Electrical and Computer Engineering University of Seoul) ;
  • Choi, Yun-Soo (Department of Geo-Informatics, University of Seoul)
  • Published : 2007.11.01
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Abstract

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

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