Structural and electrical properties of high temperature deposited epitaxial ZnO thin film by RF magentron sputtering

RF 마그네트론 스퍼터일 법으로 증착된 에피택셜 ZnO 박막의 구조적, 전기적 특성

  • Kim, Dong-Hun (Korea Advanced Institute of Science and Technology) ;
  • Cho, Nam-Gyu (Korea Advanced Institute of Science and Technology) ;
  • Park, Hun (Korea Advanced Institute of Science and Technology) ;
  • Kim, Ho-Gi (Korea Advanced Institute of Science and Technology)
  • Published : 2007.11.01

Abstract

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

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