Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.195-196
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- 2007
Impurity Property of Semiconductive Shield Materials in Power Cables
전력케이블용 반도전 재료의 불순물 함량
- Yang, Hoon (Wonkwang University) ;
-
Bang, Jeong-Hwan
(Seonam University)
;
- Nah, Chang-Woon (Chunbuk University) ;
-
Park, Dae-Hee
(Wonkwang University)
- Published : 2007.11.01
Abstract
In this paper, we investigated impurity content of carbon nanotube reinforced semiconductive shield materials and conventional semiconductive shield materials in power cables. To reduce impurity content, we used solution compounding method that an adding process of extra additives neglected. Impurity content measured through ICP-AES(Inductively Coupled Plasma Atomic Emission Spectroscopy). Also, impurity measured Ca, Cu, Fe, Al, Mg, Na, K, Si in eight. As a result, carbon nanotube reinforced semiconductive shield materials is lower than conventional semiconductive shield materials in impurity content by ICP-AES.