Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation and Properties of $CuSb_2O_6$-doped $SnO_2$ Thin Films by Pulsed Laser Deposition

PLD법으로 제조된 $CuSb_2O_6-SnO_2$ 박막의 전기.광학적 특성

  • 이채종 (영남대학교 무기재료공학과) ;
  • 변승현 (영남대학교 무기재료공학과) ;
  • 이희영 (영남대학교 무기재료공학과) ;
  • 허영우 (경북대학교 신소재공학부) ;
  • 이준형 (경북대학교 신소재공학부) ;
  • 김정주 (경북대학교 신소재공학부)
  • Published : 2007.11.01
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Abstract

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

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