Covering Effects of post-deposition annealing for BST thin films on $Al_2O_3$

사파이어 기판위에 올린 BST박막의 후 열처리 효과

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.