Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Effects of the Processing Parameters on the Structure of IZO Transparent Thin Films Deposited by PLD Process

PLD를 이용한 IZO 투명전극의 결정구조에 영향을 미치는 공정인자에 대한 연구

  • Kim, Pan-Young (Department of Materials Engineering, Yeungnam University) ;
  • Lee, Jai-Yeoul (Department of Materials Engineering, Yeungnam University)
  • Published : 2007.11.01
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Abstract

In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.

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