Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nano Porous Tin Oxide Film Fabricated by Anodization

양극산화법으로 제작된 나노 다공성 주석 산화물 박막

  • Published : 2007.11.01
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Abstract

$SnO_2$ has a high potential for electric and electronic applications. We have anodized pure tin metal and nano porous tin oxide film was obtained on pure Sn. Nano porous tin oxide were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 100 V. Pore size of ~100nm was observed by FE-SEM. Pore sizes as a function of applied voltage and anodizing time were characterized. We obtained nano porous tin oxide film having an uniform pore size at low temperature. High specific surface area of $SnO_2$ will be very useful for gas sensor, lithium battery, and dye sensitized solar cell.

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