Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.362-363
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- 2007
Measurement of Drifting Mobility and Transit Time of Holes and Electrons in Stabilized a-Se Film
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Kim, Jae-Hyung
(School of Computer Aided Science, Inje University)
;
- Park, Chang-Hee (Dept. of Radiologic Technology, Daegu health College) ;
- Nam, Sang-Hee (Medical Image Research Lab., Inje University)
- Published : 2007.11.01
Abstract
The transport property of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices was studied using the moving photo-carrier grating (MPG) technique and time-of-flight (TOF) measurements. For MPG measurement, the electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. For TOF measurement, a laser beam with pulse duration of 5ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of
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