Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis on the V-I Curve of ZnO:As/ZnO:Al homo-junction LED

ZnO:As/ZnO:Al homo-junction LED의 V-I 특성 분석

  • Oh, Sang-Hyun (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Jeong, Yun-Hwan (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Liu, Yan-Yan (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 오상현 (원광대학교 전기전자 및 정보공학부) ;
  • 정윤환 (원광대학교 전기전자 및 정보공학부) ;
  • 유연연 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.11.01
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Abstract

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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