Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of chemical in post Ru CMP Cleaning solutions on abrasive particle adhesion and removal

Post Ru CMP Cleaning에서 연마입자의 흡착과 제거에 대한 chemical의 첨가제에 따른 영향

  • Kim, In-Kwon (Department of Materials Engineering, Hanyang University) ;
  • Kim, Tae-Gon (Department of Materials Engineering, Hanyang University) ;
  • Cho, Byung-Gwun (Department of Bio-Nanotechnology, Hanyang University) ;
  • Son, Il-Ryong (Department of Bio-Nanotechnology, Hanyang University) ;
  • Park, Jin-Goo (Department of Materials Engineering, Hanyang University)
  • 김인권 (한양대학교 금속재료공학과) ;
  • 김태곤 (한양대학교 금속재료공학과) ;
  • 조병권 (한양대학교 바이오나노공학과) ;
  • 손일룡 (한양대학교 바이오나노공학과) ;
  • 박진구 (한양대학교 금속재료공학과)
  • Published : 2007.11.01
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Abstract

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.

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