Annealing-induced crystallization of amorphous CoFeB layers in CoFeB/MgO/CoFeB magnetic tunnel junctions

Kitamoto, Yoshitaka (Department of Innovative and Engineered Materials, Tokyo Institute of Technology) ;
Takeuchi, Takashi (Department of Innovative and Engineered Materials, Tokyo Institute of Technology) ;
Tsunekawa, Koji (Department of Innovative and Engineered Materials, Tokyo Institute of Technology) ;
Choi, Young-Suk (Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation) ;
Nagamine, Yoshinori (Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation) ;
Djayaprawira, David D. (Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation) ;
Hoshi, Yoichi (Department of System Electronics and Information Technology, Tokyo Polytechnic University)