한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Reverse annealing of boron doped polycrystalline silicon

  • Jin, Beop-Jong (Dept. of Materials Science and Engineering, Hongik Univ.) ;
  • Hong, Won-Eui (Dept. of Materials Science and Engineering, Hongik Univ.) ;
  • Lim, Jung-Yoon (Dept. of Materials Science and Engineering, Hongik Univ.) ;
  • Kim, Deok-Hoi (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Uemoto, Tstomu (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Kim, Chi-Woo (LTPS Team, AMLCD Business, Samsung Electronics) ;
  • Ro, Jae-Sang (Dept. of Materials Science and Engineering, Hongik Univ.)
  • 발행 : 2007.08.27
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초록

Isothermal activation annealing was carried out using boron doped SLS poly-using an RTA system. We observed different behavior of reverse annealing depending on the implantation conditions.

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