한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

Effect of annealing temperature on the electrical characteristics of P-doped ZnO thin films

  • Kim, Jun-Kwan (Univ. of Science and Technology, Dept. of Next Generation Device Engineering, Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lim, Jung-Wook (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Hyun-Tak (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Sang-Hun (Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute) ;
  • Yun, Sun-Jin (Univ. of Science and Technology, Dept. of Next Generation Device Engineering, Teraelectronics device Team, IT-Convergence & Components Laboratory, Electronics and Telecommunications Research Institute)
  • 발행 : 2007.08.27
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In order to realize effective p-type doping in ZnO thin films, ZnO films were deposited on P-doped Silayers by RF-magnetron sputter deposition technique and annealed at various temperatures. The result indicated that ZnO film annealed at $700^{\circ}C$ showed p-type conduction with a high carrier concentration in the order of $10^{19}\;cm^{-3}$.

키워드