한국정보디스플레이학회:학술대회논문집
- 2007.08a
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- Pages.16-19
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- 2007
The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process
- Lee, S.J. (LG.Philips LCD Inc.) ;
- Yang, J.Y. (LG.Philips LCD Inc.) ;
- Hwang, K.S. (LG.Philips LCD Inc.) ;
- Yang, M.S. (LG.Philips LCD Inc.) ;
- Kang, I.B. (LG.Philips LCD Inc.)
- Published : 2007.08.27
Abstract
In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.
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