한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The effect of plasma damage on electrical properties of amorphous GaInZnO film

  • Kim, Min-Kyu (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Park, Jin-Seong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Jeong, Jae-Kyeong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Jeong, Jong-Han (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Ahn, Tae-Kyung (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Yang, Hui-Won (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Lee, Hun-Jung (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Chung, Hyun-Joong (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Mo, Yeon-Gon (Display Laboratory, Corporate R&D Center, Samsung SDI) ;
  • Kim, Hye-Dong (Display Laboratory, Corporate R&D Center, Samsung SDI)
  • Published : 2007.08.27
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Abstract

The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

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