Low Work Function and Sharp Field Emitter Arrays by Transfer Mold Fabrication Method

Extremely sharp and uniform Transfer Mold FEAs with thin film low work function TiN emitter material have been fabricated by controlling the thickness of the coated emitter materials to realize high efficient, high reliable and low-cost vacuum nanoelectronic devices..Their tip radii are 8.3-13.8 nm. Turn-on electric fields of the Ni FEAs and TiN-FEAs resulted in the low electric field values of $31.6\;V/{\mu}m$ and $44.2V/{\mu}m$,respectively, at the short emitter/anode distance: less than $30\;{\mu}m$, which are lower than those of conventional FE As such as Spindt type FEAs and carbon nan otube FEAs The Transfer Metal Mold fabrication method is one of the best methods of changing emit ter materials with sharp and uniform emit ter shapes.