Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electric properties Analysis and fabrication of ZnO:As/ZnO:Al homo-junction LED

ZnO:As/ZnO:Al homo-junction LED의 제조와 전기적 특성 분석

  • Kim, Kyeong-Min (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • So, Soon-Jin (Knowledge*On Semiconductor Inc.) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 김경민 (원광대학교 전기전자 및 정보공학부) ;
  • 소순진 ((주)나리지*온) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.06.21
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Abstract

The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Using the ampoule-tube to fabricate the p-type ZnO will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

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