Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Characteristics of phosphorescent OLED fabricated on IAZO anode grown by co-sputtering method

Co-sputtering 방법으로 제작한 IAZO 박막의 특성과 이를 이용하여 제작한 인광 OLED의 특성 분석

  • Bae, Jung-Hyeok (Dept. of Information and Nano Materials Eng. Kumoh National Institute of Technology (KIT)) ;
  • Kim, Han-Ki (Dept. of Information and Nano Materials Eng. Kumoh National Institute of Technology (KIT))
  • 배정혁 (금오공과대학교 정보나노소재공학과) ;
  • 김한기 (금오공과대학교 정보나노소재공학과)
  • Published : 2007.06.21
Download PDF
⟨ Previous Next ⟩

Abstract

IAZO (indium aluminium zinc oxide) anode films were co-sputtered on glass substrate using a dual target DC magnetron sputtering system. For preparation of IATO films, at constant DC power of IZO (indium zinc oxide) target of 100 W, the DC power of AZO (Aluminum zinc oxide) target was varied from 0 to 100 W. To analyze electrical and optical properties of IAZO anode, Hall measurement examination and UV/V is spectrometer were performed, respectively. In addition, structure of IAZO anode film was examined by X-ray diffraction (XRD) method. Surface smoothness was investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From co-sputtered IAZO anode, good conductivity($2.32{\times}10^{-4}{\Omega}.cm$) and high transparency(approximately 80%) in the visible range were obtained even at low temperature deposition. Finally, J-V-L characteristics of phosphorescent OLED with IAZO anode were studied by Keithley 2400 and compared with phosphorescent OLED with conventional ITO anode.

Keywords