Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
- /
- Pages.86-87
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- 2007
Oxide Thickness Measurement of CMP Test Wafer by Dispersive White-light Interferometry
분산형 백색광 간섭계를 이용한 CMP 테스트 웨이퍼의 $SiO_2$ 두께 측정
-
Park, Boum-Young
(Pusan National University)
;
-
Kim, Young-Jin
(Pusan National University)
;
-
Jeong, Hae-Do
(Pusan National University)
;
- Ghim, Young-Sik (Korea Advanced Institute of Science arid Technology) ;
- You, Joon-Ho (Korea Advanced Institute of Science arid Technology) ;
- Kim, Seung-Woo (Korea Advanced Institute of Science arid Technology)
- Published : 2007.06.21
Abstract
The dispersive method of white-light interferometry is proper for in-line 3-D inspection of dielectric thin-film thickness to be used in the semiconductor and flat-panel display industry. This research is the measurement application of CMP patterned wafer. The results describe 3-D and 2-D profile of the step height during polishing time.